Nitrogen-enabled high growth rates in hydride vapor phase epitaxy
US12325931B2 · kind B2 · utility
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19References
11Claims
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Key dates
| Filing date | Jun 13, 2020 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jun 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed herein are methods and devices that use a low-thermal conductivity inert gas to shield reactant gases and thus enabling a cold wall operation within a hot wall system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.