Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer
US12325933B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Dec 22, 2022 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Apr 6, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/723
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the silicon carbide powder includes carbon and silicon and in the silicon carbide powder, O1s/C1s of a surface measured by X-ray photoelectron spectroscopy is 0.28 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.