Techniques for singulating photonics die with optical quality edge
US12326593B1 · kind B1 · utility
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Key dates
| Filing date | Jan 26, 2024 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jan 26, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12061
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of singulating a die of a wafer includes etching a trench on a first surface of a wafer comprising a die and performing a cut on a second surface of the wafer, wherein the cut overlaps with the trench on the first surface of the wafer to separate the die from the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.