Semiconductor structure and manufacturing method thereof
US12327781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jan 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. A plurality of conductive balls is placed over a circuit substrate, where each of the conductive balls is placed over a contact area of one of a plurality of contact pads that is accessibly revealed by a patterned mask layer. The conductive balls are reflowed to form a plurality of external terminals with varying heights connected to the contact pads of the circuit substrate, where a first external terminal of the external terminals formed in a first region of the circuit substrate and a second external terminal of the external terminals formed in a second region of the circuit substrate are non-coplanar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.