Microelectronic structures including glass cores
US12327797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2020 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jun 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are microelectronic structures including glass cores, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a glass core having through-glass vias (TGVs) therein; a metallization region at a first face of the glass core, wherein a conductive pathway in the first metallization region is conductively coupled to at least one of the TGVs; a bridge component in the metallization region; a first conductive contact at a face of the metallization region, wherein the first conductive contact is conductively coupled to the conductive pathway; and a second conductive contact at the face of the metallization region, wherein the second conductive contact is conductively coupled to the bridge component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.