Semiconductor device and method of forming multi-layer shielding structure with layers of ferromagnetic material, protective material, laminate material or conductive material over the semiconductor device
US12327799B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jun 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate and electrical components disposed over the substrate. An encapsulant is disposed over the substrate and electrical components. A multi-layer shielding structure is formed over the encapsulant. The multi-layer shielding structure has a first layer of ferromagnetic material and second layer of a protective layer or conductive layer. The ferromagnetic material can be iron, nickel, nickel iron alloy, iron silicon alloy, silicon steel, nickel iron molybdenum alloy, nickel iron molybdenum copper alloy, iron silicon aluminum alloy, nickel zinc, manganese zinc, other ferrites, amorphous magnetic alloy, amorphous metal alloy, or nanocrystalline alloy. The first layer can be a single, homogeneous material. The protective layer can be stainless steel, tantalum, molybdenum, titanium, nickel, or chromium. The conductive layer can be copper, silver, gold, or aluminum. The multi-layer shielding structure protects the electrical components from low frequency and high frequency interference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.