Semiconductor device and method for manufacturing the same
US12328893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Mar 19, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a drain electrode, a gate electrode, and a first and a second stress modulation layers. The first nitride-based semiconductor layer has a first thickness. The second nitride-based semiconductor layer has a bandgap less than a bandgap of the first nitride-based semiconductor layer to form a heterojunction therebetween. The second nitride-based semiconductor layer has a second thickness, and a ratio of the first thickness to the second thickness is in a range from 0.5 to 5. The first and the second stress modulation layers provide a first and a second drift regions of the second nitride-based semiconductor layer with stress, respectively, resulting in induction of a first and a second 2DHG regions within the first and the second drift regions, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.