Semiconductor integrated circuit component
US12328896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jul 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a semiconductor substrate having a first type of conductivity and a semiconductor component. The semiconductor component includes: a buried semiconductor region having a second type of conductivity opposite to the first type of conductivity; a first gate region and a second gate region each extending in depth from a front face of the semiconductor substrate to the buried semiconductor region; a third gate region extending in depth from the front face of the semiconductor substrate and being electrically connected to the buried semiconductor region; and an active area delimited by the first gate region, the second gate region and the buried semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.