SiC volumetric shapes and methods of forming boules
US12330948B2 · kind B2 · utility
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57Claims
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Key dates
| Filing date | Mar 29, 2018 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Mar 29, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/80
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.