Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound
US12332567B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jul 17, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention is a composition for forming a silicon-containing resist underlayer film, containing one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1). This provides: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a resist underlayer film having favorable adhesiveness to resist patterns regardless of whether in negative development or positive development, and also having favorable adhesiveness to finer patterns as in EUV photo-exposure; a patterning process; and a silicon compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.