Plasma processing apparatus and plasma processing method
US12334316B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2020 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | May 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus or method that improves the yield of wafer processing, including a sample stand on which the wafer is mounted; plural heaters which are arranged in three or more regions in the radial direction including a circular region concentrically arranged around the center and ring-like regions surrounding the outer periphery on plural radii in the radial direction from the center toward the outer peripheral side, and which include one arranged in each of plural arc-like regions divided in the circumferential direction around the center of at least one of the ring-like regions; plural temperature sensors arranged in the radial direction and the number of which is smaller than that of heaters; and a control unit which adjusts the output of each of the plural heaters according to the output from the temperature sensor so that the temperature of the sample stand becomes closer to a target value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.