Substrate processing method and substrate processing system
US12334343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2024 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Apr 4, 2044 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/042
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus includes a chamber; a substrate support disposed in the chamber; a gas supply that supplies a gas into the chamber; and a controller that controls an overall operation of the substrate processing apparatus. The controller executes a process including: (a) placing a substrate on the substrate support, the substrate including an etching layer and a patterned mask on the etching layer; (b) forming a film on the patterned mask; (c) forming a reaction layer on the film; and (d) removing the reaction layer by applying energy to the reaction layer. In the step (c) a temperature of the substrate is set according to a thickness of the reaction layer to be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.