Method and apparatus for plasma etching
US12334353B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Oct 26, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Oct 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32146
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma etching a compound semiconductor substrate includes providing a substrate that includes a compound semiconductor material on a substrate support within a chamber. An etchant gas or gas mixture is introduced into the chamber. A plasma of the etchant gas or gas mixture is sustained within the chamber to plasma etch the compound semiconductor material. A pulsed electrical bias power is applied to the substrate support whilst the plasma is being sustained. The pulsed electrical bias power has a pulse frequency of less than or equal to about 160 Hz and a duty cycle of less than or equal to about 50%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.