Plasma etching tools and systems
US12334356B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jun 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate that includes: loading the substrate into a plasma etch chamber, the substrate including a patterned hard mask layer and an underlying layer, the plasma etch chamber including: a chamber part having a surface including a refractory metal; and a first electrode; flowing a process gas into the plasma etch chamber; while flowing the process gas, applying a source power to the first electrode of the plasma etch chamber to generate a plasma in the plasma etch chamber; exposing the surface of the chamber part to the plasma to sputter the refractory metal from the surface of the chamber part; and exposing the substrate to the plasma to deposit the refractory metal onto a portion of the patterned hard mask layer and etch the underlying layer selectively to the patterned hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.