Substrate processing apparatus and substrate processing method
US12334366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Feb 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus includes a spin chuck that holds a substrate, and a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck. The fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate. The gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.