Measuring method of resistivity of a wafer

US12334403B2 · kind B2 · utility

Assignees

• Zing Semiconductor Corporation · CN
• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xing Wei · Xi'an, CN
• Minghao LI · Hefei, CN
• Zhongying Xue · Shanghai, CN

Key dates

• Filing date: Dec 8, 2021
• Grant date: Jun 17, 2025
• Expiry date: Jul 22, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R27/02
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The invention provides a measuring method of resistivity of a wafer, comprising: choosing a wafer to be measured, conducting a thermal treatment for the wafer to remove a thermal doner in the wafer, conducting an oxidation process for the wafer to form an oxidized surface on the wafer, and measuring resistivity of the wafer. In the method, firstly, the wafer is oxidized to get the oxidized surface, so as to restrict surface variation when placing the wafer in a later process. Therefore, the resistivity measurement of the wafer surface only slightly varies.