Thermal management solution for power stage comprising top-cooled power semiconductor switching devices
US12336148B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2023 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Dec 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10166
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A power stage assembly for improved thermal dissipation and EMC for top-cooled semiconductor power switching devices, e.g. high voltage, high current lateral GaN power transistors in embedded die packages. The power switching devices are mounted on a PCB substrate, with electrical connections between a bottom side of each device package and the PCB. Each device package has a thermal pad on the top-side. A heat-spreader is secured in thermal contact with the thermal pads of each device, and a heatsink is in thermal contact with the heat-spreader. The heat-spreader is a multilayer structure comprising: a thermally conductive metal substrate layer in contact with the heatsink; a conductive layer providing an EMC layer which is connected to power ground; a conductive layer defining large area thermal pads in thermal contact with thermal pads of each die; and dielectric material electrically isolating conductive layers of the heat-spreader.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.