Integrated circuit device
US12336202B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Aug 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes: a lower electrode disposed on a substrate; an insulating support pattern supporting the lower electrode; a dielectric film surrounding the lower electrode and the insulating support pattern; a high-k interface layer arranged between the lower electrode and the dielectric film and between the insulating support pattern and the dielectric film, wherein the high-k interface layer contacts the insulating support pattern and includes a zirconium oxide layer; and an upper electrode disposed adjacent the lower electrode, wherein the high-k interface layer and the dielectric film are disposed between the upper electrode and the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.