Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells
US12336220B2 · kind B2 · utility
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Key dates
| Filing date | Feb 24, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jun 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device. The structure includes a semiconductor substrate, a body well in the semiconductor substrate, a source region in the body well, a drain well in the semiconductor substrate, a drain region in the drain well, and a gate electrode laterally positioned between the source region and the drain region. The drain well includes an edge adjacent to the body well, and the edge of the drain well has a spaced relationship with the body well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.