Tensile strained semiconductor monocrystalline nanostructure
US12336239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Sep 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor structure including a semiconductor substrate having a top surface, one or more group IV semiconductor monocrystalline nanostructures, each having a first and a second extremity defining an axis parallel to the top surface of the semiconductor substrate and separated therefrom by a non-zero distance, each nanostructure having a source structure epitaxially grown on the first extremity and a drain structure epitaxially grown on the second extremity. The epitaxial source and drain structures are made of a group IV semiconductor doped with one or more of Sb and Bi, and optionally one or more of As and P, thereby creating tensile strain in the group IV semiconductor monocrystalline nanostructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.