Semiconductor devices and methods of manufacturing thereof
US12336271B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jan 22, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first plurality of channel layers. The first plurality of channel layers extend along a first direction. The semiconductor device includes a second plurality of channel layers. The second plurality of channel layers also extend along the first direction. The semiconductor de123329-vice includes a first dielectric fin structure that also extends along the first direction. The semiconductor device includes a first gate structure that extends along a second direction. The first gate structure comprises a first portion that wraps around each of the first plurality of channel layers and a second portion that wraps around each of the second plurality of channel layers. The first dielectric fin structure separates the first and second portions from each other. The first gate structure comprises a third portion that connects the first and second portions to each other and is vertically disposed below the first dielectric fin structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.