Chen-Ping Chen
47Patents
3h-index
24Co-inventors
59Inventor score
Filing activity: Sep 30, 2009 → Jun 4, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8048764B2 | Dual etch method of defining active area in semiconductor device | Electricity | 7 | Active |
| US10148400B2 | Method and apparatus for reference signal transmitting and receiving in active antenna systems | Electricity | 6 | Active |
| US9130058B2 | Forming crown active regions for FinFETs | Electricity | 5 | Active |
| US9966129B1 | Controller and control method for dynamic random access memory | Electricity | 2 | Active |
| US11908903B2 | Process window control for gate formation in semiconductor devices | Performing Operations; Transporting | 1 | Active |
| US11552195B2 | Semiconductor devices and methods of manufacturing thereof | Electricity | 1 | Active |
| US11532723B2 | Fin-end gate structures and method forming same | Electricity | 1 | Active |
| US11721741B2 | Field-effect transistor and method of forming the same | Electricity | 1 | Active |
| US11908746B2 | Semiconductor devices and methods of manufacturing thereof | Performing Operations; Transporting | 1 | Active |
| US11488858B2 | Methods for forming stacked layers and devices formed thereof | Performing Operations; Transporting | 1 | Active |
| US10216658B2 | Refreshing of dynamic random access memory | Electricity | 1 | Active |
| US12199151B2 | Process window control for gate formation in semiconductor devices | Performing Operations; Transporting | 0 | Active |
| US12034056B2 | Semiconductor devices including gate structures with gate spacers | Performing Operations; Transporting | 0 | Active |
| US12136657B2 | Field-effect transistor and method of forming the same | Electricity | 0 | Active |
| US11264283B2 | Multi-channel devices and methods of manufacture | Electricity | 0 | Active |
| US12142655B2 | Transistor gate structures and methods of forming the same | Electricity | 0 | Active |
| US9543210B2 | Forming crown active regions for FinFETs | Electricity | 0 | Active |
| US11769821B2 | Semiconductor device having a corner spacer | Electricity | 0 | Active |
| US11605727B2 | Method of manufacturing a semiconductor device and a semiconductor device | Electricity | 0 | Active |
| US12266715B2 | Semiconductor devices and methods of manufacturing thereof | Electricity | 0 | Active |
| US12336271B2 | Semiconductor devices and methods of manufacturing thereof | Electricity | 0 | Active |
| US12198984B2 | Semiconductor device including gate spacer with tilted portion and method of manufacturing thereof | Performing Operations; Transporting | 0 | Active |
| US9996469B2 | Methods for prefetching data and apparatuses using the same | Physics | 0 | Active |
| US12294023B2 | Method of manufacturing a semiconductor device having corner spacers adjacent a fin sidewall | Electricity | 0 | Active |
| US12087638B2 | Multi-channel devices and methods of manufacture | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.