Method for forming semiconductor structure using fluorine to treat gate stack
US12336273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jun 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A method for forming a semiconductor structure is provided. The method includes forming a first fin structure over a first region of a substrate and forming a second fin structure over a second region of a substrate, forming a first gate dielectric layer around the first fin structure and forming a second gate dielectric layer around the second fin structure, forming a barrier layer over the first gate dielectric layer, treating the substrate with a first fluorine-containing gas, forming a work function layer over the second gate dielectric layer after treating the substrate with the first fluorine-containing gas, and treating the substrate with a second fluorine-containing gas after forming the work function layer over the second gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.