Vertical device triggered silicon control rectifier
US12336302B1 · kind B1 · utility
0Cited by
9References
18Claims
0Family size
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Key dates
| Filing date | May 3, 2024 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | May 3, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a device triggered silicon control rectifier (SCR) and methods of manufacture. the structure includes: a vertical silicon controlled rectifier having a diffusion region in a well of a semiconductor substrate; a vertical triggering device sharing the diffusion region with the vertical silicon controlled rectifier; and a body contact adjacent to the vertical triggering device and electrically connecting to the well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.