Piezoelectric film layered structure and method for producing thereof
US12336434B2 · kind B2 · utility
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Key dates
| Filing date | Dec 20, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Apr 17, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/308
Abstract
A piezoelectric film layered structure includes a base, and a ScAlN film formed on the base. The ScAlN film has an unpaired electron density within a range between 1.7×1018 electrons/cm3, inclusive, and 1.1×1019 electrons/cm3, inclusive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.