Phase change memory
US12336440B2 · kind B2 · utility
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44Claims
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Key dates
| Filing date | May 23, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | May 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell is manufactured by: (a) forming a stack comprising a first layer made of a phase change material and a second layer made of a conductive material; (b) forming a mask on the stack covering only the memory cell location; and (c) etching portions of the stack not covered by the first mask. The formation of the mask covering only the memory cell location comprises defining a first mask extending in a row direction for each row of memory cell locations and then patterning the first mask in a column direction for each column of memory cell locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.