Photomask including fiducial mark and method of making a photomask
US12339582B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 29, 2023 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Nov 29, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.