Dynamic and localized temperature control for epitaxial deposition reactors
US12341038B2 · kind B2 · utility
0Cited by
7References
17Claims
0Family size
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Key dates
| Filing date | Jan 11, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | May 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for improving film growth uniformity on a semiconductor substrate. The film growth uniformity is improved by adjusting the amount of power provided to the substrate by spot heaters as the substrate is rotated. Therefore, the amount of power provided to the substrate by the spot heaters changes as the portion of the substrate being heated by spot heater changes. The change in power provided by the spot heater is dependent on a temperature correction factor applied by the controller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.