Method of fabricating a semiconductor structure and semiconductor structure obtained therefrom
US12341056B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Jun 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor structure and the semiconductor structure are disclosed. The method uses high flow rate of an etchant and an optimized scan pattern, so that the obtained semiconductor structure is a device upside-down bonded to the carrier wafer without any silicon remaining and is ready for subsequent lithography process for back via contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.