Semiconductor storage device and manufacturing method thereof
US12341102B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 10, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Oct 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device according to an embodiment includes: a first stacked body including a plurality of first electrode layers and a plurality of first insulating layers that are alternately stacked on a substrate in a first direction perpendicular to the substrate; a plurality of semiconductor films penetrating the first stacked body in the first direction; a second stacked body including a plurality of second electrode layers and a plurality of second insulating layers that are alternately stacked on the first stacked body in the first direction; and a plurality of contact plugs penetrating the second stacked body in the first direction and separately connected to the respective plurality of semiconductor films and the respective plurality of second electrode layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.