Bipolar transistor
US12342555B1 · kind B1 · utility
0Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2024 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Apr 4, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/891
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region; an extrinsic base comprising an emitter opening with an angled sidewall; an emitter within the emitter opening; and an intrinsic base between the emitter and the collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.