Source or drain structures with vertical trenches
US12342611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2024 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Jan 29, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit structures having source or drain structures with vertical trenches are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. The epitaxial structures of the first and second source or drain structures have a vertical trench centered therein. The first and second source or drain structures include silicon and a Group V dopant impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.