Switches in bulk substrate
US12342626B2 · kind B2 · utility
0Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2023 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Feb 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.