Architecture for and method of operating a metal oxide based sensor
US12342646B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 5, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Feb 15, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
The phenomenon of charge trapping and its impact on noise performance of an imaging array using thin film transistor switches can be ameliorated by compensation techniques. One such compensation technique is a recovery process by which trapped charges are detrapped through the periodic imposition of thermal, optical, and/or bias energy. Another technique involves a shield line overlying the transistor switches and connected to the gate base to reduce the gate base resistance and hence reduce changes in the RC time constant of the gate bus.
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