Deposition method and deposition apparatus
US12344930B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Jun 23, 2021 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Sep 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/285
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposition method performed using a deposition apparatus is provided. The deposition apparatus includes: a source line configured to supply Ru3(CO)12 contained in a raw material container into a chamber; a CO gas line configured to supply a CO gas into the raw material container; a bypass line connecting the source line and the CO gas line, and forming a line that does not pass through the raw material container; and a first valve connected to the source line. The deposition method includes: opening the first valve to supply Ru3(CO)12 and the CO gas from the raw material container through the source line;
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.