Tungsten-infused aluminum nitride crystals and methods of forming them
US12344957B1 · kind B1 · utility
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Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Sep 29, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, polycrystalline AlN ceramics, single-crystalline AlN boules, and/or single-crystalline AlN substrates are infused with tungsten present on the surface and/or within the bulk thereof. The tungsten-infused AlN materials may be utilized to fabricate electronic and/or optoelectronic (e.g., light-emitting) devices thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.