Bonding defect detection for die-to-die bonding in memory devices
US12347510B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2023 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Dec 27, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include: a memory device that includes a memory cell, a page buffer, and a first switch having a first end that is electrically connected to a first node located at a bonding point of the memory cell and a second end that is connected to a second node located at the page buffer; and a memory controller that is configured to apply a pre-charge voltage to the first node and the second node in a first period, to close the first switch in a second period following the first period, and is configured to determine whether bonding between the memory cell and the first switch is defective based on a voltage of the second node after the first switch is closed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.