Debonding structures for wafer bonding
US12347717B2 · kind B2 · utility
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11References
20Claims
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Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Oct 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/059
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a method to form a bonded semiconductor structure. The method includes forming a first bonding layer on a first wafer, forming a debonding structure on a second wafer, forming a second bonding layer on the debonding structure, bonding the first and second wafers with the first and second bonding layers, and debonding the second wafer from the first wafer via the debonding structure. The debonding structure includes a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.