Semiconductor device structure with a protection cap at an end portion of a conductive line
US12347722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2023 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Apr 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/163
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the end portion. The first protection cap and the first conductive line are made of different conductive materials, and the first protection cap exposes a peripheral region of a top surface of the end portion. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.