Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

US12349351B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Jianzhong Wu · Fujian, CN
• Zongke Xu · 红钢城街道, CN
• Jingjing Geng · 红钢城街道, CN

Key dates

• Filing date: Sep 12, 2022
• Grant date: Jul 1, 2025
• Expiry date: Jun 23, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

A method for forming a three-dimensional (3D) memory device includes forming a dielectric stack including a plurality of first/second dielectric layer pairs over a substrate, forming a plurality of channel structures extending in a lateral direction in a core region of the dielectric stack, forming a staircase structure including a plurality of stairs extending along the lateral direction in a staircase region of the dielectric stack, forming a first drain-select-gate (DSG) cut opening extending in the lateral direction in the core region and a second DSG cut opening in the staircase region, and forming a first DSG cut structure in the first DSG cut opening and a second DSG cut structure in the second DSG cut opening.