Semiconductor device including a trench structure having a trench dielectric structure with a gap
US12349401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2022 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | May 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
Abstract
A semiconductor device is proposed. An example of the semiconductor device includes a semiconductor body having a first main surface. A trench structure extends into the semiconductor body from the first main surface. The trench structure includes a trench electrode structure and a trench dielectric structure. The trench dielectric structure includes a gate dielectric in an upper part of the trench dielectric structure and a gap in a lower part of the trench dielectric structure. The semiconductor device further includes a body region adjoining the gate dielectric at a sidewall of the trench structure in the upper part of the trench dielectric structure. The gate dielectric extends deeper into the semiconductor body along the sidewall than the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.