Enlarged backside contact
US12349432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2021 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Mar 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method includes performing a first etching process on a backside of a substrate to expose a dummy contact structure, performing a first deposition process to deposit a first portion of an oxide layer around the dummy contact structure, performing a second etching process to at least partially remove the first portion of oxide layer, forming a spacer layer around the dummy contact structure, performing a second deposition process to form a second portion of the oxide layer around the spacer layer, removing the spacer layer and the dummy contract structure to leave an opening, and filling the opening with a conductive material to form a conductive plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.