Patent · US Active

Transfer printing for RF applications

US12349461B2 · kind B2 · utility

0Cited by
2References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 24, 2022
Grant dateJul 1, 2025
Priority date
Expiry dateJul 30, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03F2200/451
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A semiconductor structure for RF applications comprises: a first μTP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.