Gregory D. U'Ren
16Patents
7h-index
14Co-inventors
63Inventor score
Filing activity: Sep 22, 2000 → Aug 24, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6365479B1 | Method for independent control of polycrystalline silicon-germanium in a silicon-germanium HBT and related structure | Electricity | 25 | Expired |
| US6514886B1 | Method for elimination of contaminants prior to epitaxy | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7423287B1 | System and method for measuring residual stress | Emerging Cross-Sectional Technologies | 13 | Active |
| US7545552B2 | Sacrificial spacer process and resultant structure for MEMS support structure | Performing Operations; Transporting | 11 | Active |
| US7580172B2 | MEMS device and interconnects for same | Performing Operations; Transporting | 10 | Active |
| US7064073B1 | Technique for reducing contaminants in fabrication of semiconductor wafers | Chemistry; Metallurgy | 9 | Expired |
| US6580104B1 | Elimination of contaminants prior to epitaxy and related structure | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6797578B1 | Method for fabrication of emitter of a transistor and related structure | Electricity | 3 | Expired |
| US6559022B2 | Method for independent control of polycrystalline silicon-germanium in an HBT | Electricity | 3 | Expired |
| US6861308B2 | Method for fabrication of SiGe layer having small poly grains and related structure | Electricity | 2 | Expired |
| US10181429B2 | Method for the formation of transistors PDSO1 and FDSO1 on a same substrate | Electricity | 1 | Active |
| US7183627B2 | Independent control of polycrystalline silicon-germanium in an HBT and related structure | Electricity | 0 | Expired |
| US7078744B1 | Transistor emitter having alternating undoped and doped layers | Electricity | 0 | Expired |
| US7132700B1 | SiGe layer having small poly grains | Electricity | 0 | Expired |
| US12349461B2 | Transfer printing for RF applications | Electricity | 0 | Active |
| US11610916B2 | Transfer printing for RF applications | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.