Plating process method
US12351932B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2021 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Oct 18, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D17/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a technique that ensures suppressing deterioration of a plating quality of a substrate caused by gas bubbles accumulating on an entire lower surface of a membrane.A plating process method includes a step of guiding an anode liquid to a second region R2 positioned below a membrane 40 and above a first region R1 to decrease a concentration of gas bubbles contained in the anode liquid in the second region below a concentration of gas bubbles contained in the anode liquid in the first region; a step of discharging the anode liquid from the first region; a step of discharging the anode liquid from the second region; a step of supplying a cathode liquid to a cathode chamber 12 in which a substrate Wf is disposed; and a step of flowing electricity between the substrate Wf and an anode 13 to electroplate a metal on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.