EUV photo masks and manufacturing method thereof
US12353120B2 · kind B2 · utility
0Cited by
13References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 30, 2021 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Jan 22, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask includes a substrate, a lower reflective multilayer disposed over the substrate, an intermediate layer disposed over the lower reflective multilayer, an upper reflective multilayer disposed over the intermediate layer, a capping layer disposed over the upper reflective multilayer, and an absorber layer disposed in a trench formed in the upper reflective layers and over the intermediate layer. The intermediate layer includes a metal other than Cr, Ru, Si, Si compound and carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.