Semiconductor device and method of forming an embedded redistribution layer
US12354990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Jul 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor die. A first dielectric layer is formed over the semiconductor die. A second dielectric layer is formed over the first dielectric layer. A trench is formed in the second dielectric layer. A via opening is formed to expose a contact pad of the semiconductor die within the trench. A seed layer is formed over the second dielectric layer. The seed layer extends into the trench and via opening. A conductive material is deposited into the via opening and trench. The conductive material is overburdened from the trench. The seed layer around the conductive material is etched in a first etching step. The conductive material is etched in a second etching step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.