Semiconductor device
US12356659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Oct 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0184
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device may include first and second active regions on a substrate, first and second active patterns on the first and second active regions, first and second source/drain patterns on the first and second active patterns, first and second silicide patterns on the first and second source/drain patterns, and first and second active contacts coupled to the first and second source/drain patterns. A lowermost portion of the first active contact is at a level higher than that of a lowermost portion of the second active contact. A thickness of the first silicide pattern is greater than that of the second silicide pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.