Device comprising electrostatic control gates distributed on two opposite faces of a semiconductor portion
US12356676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Jun 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/311
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A spin qubit quantum device includes a semiconductor portion having a first region disposed between two second regions; a first control gate disposed in direct contact with the first region and configured to control a minimum potential energy level in the first region, and disposed in direct contact with a first face of the semiconductor portion; and second electrostatic control gates, each disposed in direct contact with one of the second regions and configured to control a maximum potential energy level in one of the second regions, and disposed in direct contact with a second face, opposite to the first face, of the semiconductor portion, The first gate is not aligned with the second gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.