SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
US12356687B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 25, 2024 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Apr 25, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02579
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.